View IRFB4019PBF_494418.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97075
DIGITAL AUDIO MOSFET
Features
* Key Parameters Optimized for Class-D Audio Amplifier Applications * Low RDSON for Improved Efficiency * Low QG and QSW for Better THD and Improved Efficiency * Low QRR for Better THD and Lower EMI * 175C Operating Junction Temperature for Ruggedness * Can Deliver up to 200W per Channel into 8 Load in Half-Bridge Configuration Amplifier
G S D
IRFB4019PBF
Key Parameters
150 80 13 5.1 2.4 175
D
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
V m: nC nC C
G
D
S
TO-220AB
D S
G
Description
Gate
Drain
Source
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10lbxin (1.1Nxm)
Max.
150 20 17 12 51 80 40 0.5 -55 to + 175
Units
V A
W W/C C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. --- 0.50 --- Max. 1.88 --- 62 C/W Units
Notes through are on page 2
www.irf.com
1
3/2/06
IRFB4019PBF
Electrical Characteristics @ T J = 25C (unless otherwise specified)
Parameter
BV DSS V DSS/T J R DS(on) V GS(th) V GS(th)/T J IDSS IGSS g fs Qg Q gs1 Q gs2 Q gd Q godr Q sw R G(int) td(on) tr td(off) tf C iss C oss C rss C oss LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Q gs2 + Q gd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
Min.
150 --- --- 3.0 --- --- --- --- --- 14 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 0.19 80 --- -13 --- --- --- --- --- 13 3.3 0.95 4.1 4.7 5.1 2.4 7.0 13 12 7.8 800 74 19 99 4.5 7.5 --- --- 95 4.9 --- 20 250 100 -100 --- 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- pF V GS = 0V V DS = 50V ns
Conditions
V GS = 0V, ID = 250A V GS = 10V, ID = 10A
V m V mV/C A nA S
V/C Reference to 25C, ID = 1mA
e
V DS = V GS, ID = 50A V DS = 150V, V GS = 0V V DS = 150V, V GS = 0V, T J = 125C V GS = 20V V GS = -20V V DS = 10V, ID = 10A V DS = 75V
nC
V GS = 10V ID = 10A See Fig. 6 and 19
V DD = 75V, V GS = 10VAe ID = 10A R G = 2.4
= 1.0MHz, Between lead, 6mm (0.25in.) from package
See Fig.5
V GS = 0V, V DS = 0V to 120V
D
G S
and center of die contact
Avalanche Characteristics
Parameter Typ. Max. Units mJ A mJ
E AS IAR E AR
Single Pulse Avalanche Energyd Avalanche CurrentAg Repetitive Avalanche Energy
---
73
g
Min.
--- --- --- --- --- --- --- --- 64 160
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
IS @ T C = 25C Continuous Source Current ISM V SD trr Q rr
Notes:
Typ. Max. Units
17 A 51 1.3 96 240 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. T J = 25C, IS = 10A, V GS = 0V T J = 25C, IF = 10A di/dt = 100A/s
(Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
e
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.46mH, RG = 25, IAS = 10A. Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
2
www.irf.com
IRFB4019PBF
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
10
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
1
5.0V
1
0.1
5.0V 60s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
60s PULSE WIDTH Tj = 175C
0.1 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
Fig 2. Typical Output Characteristics
3.0
VDS = 25V
ID, Drain-to-Source Current()
RDS(on) , Drain-to-Source On Resistance
ID = 10A
2.5
60s PULSE WIDTH
10.0
VGS = 10V
(Normalized)
TJ = 175C
2.0
1.0
1.5
TJ = 25C
1.0
0.1 2 4 6 8 10
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ, Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID= 10A VDS = 120V VDS= 75V VDS= 30V
16
C, Capacitance (pF)
1000
Ciss
12
100
Coss
8
4
Crss
10 1 10 100 1000
0 0 5 10 15 20 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFB4019PBF
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100 100sec 1msec 10 10msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 DC
10
TJ = 175C
1
TJ = 25C
VGS = 0V
0.1 0.0 0.5 1.0 1.5
100
1000
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20 5.0
Fig 8. Maximum Safe Operating Area
16
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
4.0
12
ID = 50A
3.0
8
2.0
4
0 25 50 75 100 125 150 175
1.0 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature (C)
TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
10
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05
J
0.1
R1 R1 J 1 2
R2 R2
R3 R3 C 3
Ri (C/W)
(sec)
0.02 0.01
0.01
1
2
3
Ci= i/Ri Ci= i/Ri
0.535592 0.000222 0.913763 0.001027 0.432454 0.006058
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRFB4019PBF
RDS (on), Drain-to -Source On Resistance ( )
ID = 10A
0.4
EAS, Single Pulse Avalanche Energy (mJ)
0.5
300
250
ID 1.3A 2.3A BOTTOM 10A
TOP
200
0.3
150
0.2
100
0.1
TJ = 125C TJ = 25C
50
0.0 4 6 8 10 12 14 16
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance Vs. Gate Voltage
100
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
Avalanche Current (A)
10
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
0.01 0.05
1
0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C.
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
80
EAR , Avalanche Energy (mJ)
60
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 10A
40
20
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
www.irf.com
5
IRFB4019PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 17a. Unclamped Inductive Test Circuit
LD VDS
Fig 17b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 18a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 18b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 19a. Gate Charge Test Circuit
Fig 19b Gate Charge Waveform
6
www.irf.com
IRFB4019PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free" INTERNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C
TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/06
www.irf.com
7

▲Up To Search▲

Price & Availability of IRFB4019PBF

	To Download IRFB4019PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .